Allen, S., Reddy, M., Rodwell, M., Smith, R., Liu, J., Martin, S., and Muller, R. (1993) Submicron Schottky-collector AlAs/GaAs resonant tunnel diodes, 1993-IEDM Tech. Digest , pp. 407-410.
Auberton-Herve, A. J. (1996) SOI: Materials to Systems, 1996-IEDM Tech. Digest , pp. 3-10
Brenner, A. E. (1997) Moore's Law, Science 275, p. 1551.
Costas, J.P. (1981) An antenna beam steering technique comprised of constant-phase array elements, Proc. IEEE 69, pp. 745-747.
Deboeck, J. and Borghs, G. (1993) III-V on Si -- heteroepitaxy versus lift-off techniques, J. Cryst. Growth 127, pp. 85-92.
Fonstad, C.G. (1984) Consideration of the relative frequency performance potential of inverted heterojunction n-p-n transistors, IEEE Electon Dev. Lett. EDL-5, pp. 99-100.
Grinberg, A.A. and Luryi, S. (1993) Coherent Transistor, IEEE Trans. Electron Devices ED-40, pp. 1512-1522.
Kroemer, H. (1982) Heterostructure bipolar transistors and integrated circuits, Proc. IEEE 70, pp. 13-25.
Luryi, S. (1988) Method of Fabricating Non-Silicon Materials on Silicon Substrate Using an Alloy of Sn and Group IV Semiconductors, US Pat. 4,769,341 (filed 1986, issued 1988).
Luryi, S. (1989) Dislocation-Free Epitaxial Layer on a Lattice-Mismatched Porous or otherwise Submicron Patterned Single Crystal Substrate, US Pat. 4,806,996 (filed 1986, issued 1989).
Luryi, S. (1992) Articles and Systems Comprising Optically Communicating Logic Elements Including an Electro-Optical Logic Element, US Pat. 5,146,078 (filed 1991, issued 1992).
Luryi, S. (1994a) How to make an ideal HBT and sell it too, IEEE Trans. Electron Devices TED-41, pp. 2241-2247; US Pat. 5,496,743 (filed 1993, issued 1996).
Luryi, S. (1994b) Article Comprising a Real-Space Transfer Semiconductor Device and Method of Making the Article, US Pat. 5,309,003 (filed 1992, issued 1994)
Luryi, S. (1996) Active Packaging: a new fabrication principle for high performance devices and systems. In Future Trends in Microelectronics: Reflections on the Road to Nanotechnology, (S. Luryi et al. eds.) NATO ASI Series E 323, Kluwer Academic, Dordrecht, pp. 35-43.
Luryi, S., Kastalsky, A., and Bean, J. C. (1984) New infrared detector on a silicon chip, IEEE Trans. Electron Devices ED-31, pp. 1135-1139; US Pat. 4,514,748 (filed 1983, issued 1985).
Luryi, S. and Sze, S.M. (1984) The Future of Microelectronics -- Hybrid Material Systems of IV/III-V Compound Semiconductors, AT&T Bell Laboratories Technical Memorandum 52111-840920-01.
Luryi, S. and Suhir, E. (1986) A new approach to the high-quality epitaxial growth of lattice-mismatched materials, Appl. Phys. Lett. 49, pp. 140-142.
Luryi, S., Pearsall, T. P., Temkin, H., and Bean, J. C. (1986) GeSi strained-layer superlattice waveguide detectors operating near 1.3 um, IEEE Electron Device Lett. EDL-7, pp. 104-107; US Pat. 4,725,870 (filed 1985, issued 1988).
Luryi, S. and Sze, S.M. (1988) Possible device applications of silicon molecular beam epitaxy, (book chapter) in Silicon Molecular Beam Epitaxy, (E. Kasper and J. C. Bean, eds.) Vol. 1, Chap. 8 CRC Uniscience Press, Inc., pp. 181-240.
Luryi, S. and Xie, Y.-H. (1991) Vertical Cavity Semiconductor Laser with Lattice-Mismatched Mirror Stack, US Pat. 5,012,486 (filed 1990, issued 1991).
Luryi, S., Grinberg, A.A., and Gorfinkel, V.B. (1993) Heterostructure bipolar transistor with enhanced forward diffusion of minority carriers, Appl. Phys. Lett. 63, pp. 1537-1539.
Luryi, S. and Miller, G. L. (1994) Semiconductor Devices Using Epitaxial Silicides on (111) Surfaces Etched in (100) Silicon Substrates, US Pat. 5,323,053 (with G. L. Miller, filed 1992, issued 1994).
Luryi, S., Xu, J.M. and Zaslavsky, A., eds. (1996) Future of Microelectronics: Reflections on the Road to Nanotechnology, NATO ASI Series E 323, Kluwer Academic, Dordrecht (1996).
Lyons, A.M. and Dahringer, D.W. (1993) Electrically conductive adhesives, in K. Mittal and A. Pizzi (eds.) Handbook of Adhesives Technology, Marcel Dekker, New York.
Return to the first section [ Active Packaging - Philosophy ]
Return to the second section [ Active Packaging - Introduction ]
Return to the third section [ Active Packaging - HBT Process ]
Return to the fourth section [ Active Packaging - Advantages ]
Return to the fifth (last) section [ Active Packaging - Conclusion ]
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