1985
42. S. Luryi, "Mechanism of operation of double-barrier
resonant-tunneling oscillators", 1985 International Electron Device
Meeting, Tech. Digest: IEDM 85, pp. 666-669 (1985).
41. S. Luryi, "Induced base transistor", Physica
134 B, pp. 466-469 (1985).
40. S. Luryi and A. Kastalsky, "Hot-electron transport
in heterostructure devices", Physica 134 B, pp. 453-465
(1985).
39. S. Luryi and F. Capasso, "Resonant tunneling of two-dimensional
electrons through a quantum wire: a negative transconductance device",
Appl. Phys. Lett. 47, pp. 1347-1349 (1985); Erratum: Appl. Phys. Lett. 48, p. 1693
(1986).
38. S. Luryi, "Frequency limit of double-barrier resonant-tunneling
oscillators", Appl. Phys. Lett. 47, pp. 490-492 (1985).
37. A. Kastalsky, S. Luryi, J. C. Bean, and T. T. Sheng, "Single-crystal
Ge/Si infrared photodetector for fiber-optics communications", Proc.
1st International Symposium on Silicon MBE, ed. by J. C. Bean (Electrochem.
Soc. Press, 1985) pp. 406-411.
36. A. Kastalsky, S. Luryi, A. C. Gossard, and W. K. Chan, "Switching in NERFET circuits", IEEE Electron Device
Lett. EDL-6, pp. 347-349 (1985).
35. A. Kastalsky, S. Luryi, A. C. Gossard, and W. K. Chan, "Negative resistance
FET for digital switching circuits", Proc. Modulated Semiconductor Structures
Conf. , Kyoto (1985).
34. S. Luryi, "An induced base hot electron transistor",
IEEE Electron Device Lett. EDL-6, pp. 178-180 (1985).
33. S. Luryi and A. Kastalsky, "Hot electron injection
devices", Superlattices and Microstructures 1, pp. 389-400
(1985).
1984
32. S. Luryi, A. Kastalsky, A. C. Gossard, and R. Hendel, "Hot electron memory effect in double-layered heterostructures",
Appl. Phys. Lett. 45, pp. 1294-1296 (1984).
31. S. Luryi, A. Kastalsky, and J. C. Bean, "New infrared
detector on a silicon chip", IEEE Trans. Electron Devices ED-31,
pp. 1135-1139 (1984).
30. A. Kastalsky and S. Luryi, "Study of real space hot electron transfer
in AlGaAs/GaAs heterostructure", Proc. 11th International Symposium on
GaAs and Related Compounds (Biarritz, France, Sept. 1984) ed. by B.
de Cremoux (Inst. Phys. Conf. Ser. No. 74, Adam Hilger Ltd., Bristol, 1985)
pp. 587-591.
29. S. Luryi and S. M. Sze, "The future of microelectronics
-- hybrid material systems of IV/III-V compound semiconductors", AT&T
Bell Laboratories Technical Memorandum, 52111-840920-01 TM, 22 pages,
September 1984.
28. A. Kastalsky and S. Luryi, "Hot electron injection in double-layered
heterostructures", Proc. 17th International Conference on Physics of
Semiconductors (San Francisco, Aug. 1984) ed. by J. D. Chadi and W.
A. Harrison (Springer-Verlag, 1985) pp. 405-408.
27. A. Kastalsky, R. A. Kiehl, S. Luryi, A. C. Gossard and R. Hendel,
"Microwave generation in NERFET", IEEE Electron Device
Lett. EDL-5, pp. 321-323 (1984).
26. S. Luryi and A. Kastalsky, "Anomalous photomagnetoresistance
effect in modulation-doped AlGaAs/GaAs heterostructures", Appl. Phys.
Lett. 45, pp. 164-167 (1984).
25. S. Luryi, A. Kastalsky, A. C. Gossard, and R. H. Hendel, "Charge injection transistor based on real-space hot-electron
transfer", IEEE Trans. Electron Devices ED-31, pp. 832-839
(1984).
24. A. Kastalsky, S. Luryi, A. C. Gossard, and R. Hendel, "A field-effect transistor with a negative differential resistance",
IEEE Electron Device Lett. EDL-5, pp. 57-60 (1984).
1983
23. F. Capasso, S. Luryi, W. T. Tsang, C. G. Bethea, and B. F. Levine,
"New transient electrical polarization phenomenon in sawtooth
superlattices", Phys. Rev. Lett. 51, pp. 2318-2321 (1983).
22. S. Luryi, A. Kastalsky, A. C. Gossard, and R. Hendel, "Unipolar transistor based on charge injection", 1983
International Electron Device Meeting, Tech. Digest, p. 738.
21. A. Kastalsky and S. Luryi, "Novel real-space transfer
hot-electron transfer devices", IEEE Electron Device Lett. EDL-4,
pp. 334-336 (1983).
20. S. Luryi and N. Lifshitz, "Phosphorus redistribution
in P-doped polycrystalline silicon/tantalum silicide system during high
temperature sintering", J. Appl. Phys. 54, pp. 6058-6060
(1983).
19. Nadia Lifshitz and Serge Luryi, "Influence of a resistive
sublayer at the polysilicon/silicon dioxide interface on MOS properties",
IEEE Trans. Electron Devices ED-30, pp. 833-836 (1983).
18. S. Luryi and R. F. Kazarinov, "Theory of quantized
Hall effect at low temperatures", Phys. Rev. B27 (Rapid
Comm.) pp. 1386-1389 (1983).
Return to the [Publication Record] home page
Return to the [Serge Luryi's] Home Page
Return to the [EE Department] home page