1996
145. Vera Gorfinkel, Serge Luryi, and Boris
Gelmont, "Theory of gain spectra for quantum cascade
lasers and temperature dependence of their characteristics at low and
moderate carrier concentrations", IEEE J.
Quant. Electronics 32, pp. 1995-2003 (1996); also
Proceedings of 3rd Int. Symp. Compound Semicond., St
Petersburg, Russia, Sept 1966 (Inst. Phys. Conf. Ser. No 155:
Chap. 9, pp. 625-628, IOP Publishing, 1997).
144. S. Luryi, "Active
Packaging: a New Fabrication Principle for High Performance Devices and
Systems", in Future of Microelectronics: Reflections on the
Road to Nanotechnology, ed. by S. Luryi, J. M. Xu, and A.
Zaslavsky, NATO ASI Series E 323, pp. 35-43, Kluwer Academic,
Dordrecht (1996).
143 G. L. Belenky, C. L. Reynolds, Jr., R.
F. Kazarinov, V. Swaminathan, S. Luryi, and J. Lopata, "Effect of p-doping profile on performance of strained
multi-quantum-well InGaAsP/InP lasers", IEEE J. Quant.
Electronics 32, pp. 1450-1455 (1996).
142. V. B. Gorfinkel, M. I. Gouzman, S.
Luryi, and E. L. Portnoi, "New ideology of
all-optical microwave systems based on the use of semiconductor laser
as a down-converter", in Future of Microelectronics: Reflections on the Road to Nanotechnology,
ed. by S. Luryi, J. M. Xu, and A. Zaslavsky, pp. 385-389, Kluwer
Publishers, Amsterdam (1996).
141. S. Luryi and A. Zaslavsky, "Quantum well tunneling devices" in Properties
of III-V Superlattices and Quantum Wells, ed. by P. K.
Bhattacharya, INSPEC Datareview Series (IEE, London, UK, 1996).
140. Z. S. Gribnikov, S. Luryi, and A.
Zaslavsky, "Increased functionality VLSI-compatible
devices based on backward-diode floating base Si/SiGe heterojunction
bipolar transistors", in Future of Microelectronics: Reflections on the Road to Nanotechnology,
ed. by S. Luryi, J. M. Xu, and A. Zaslavsky, pp. 365-370, Kluwer
Publishers, Amsterdam (1996).
139. Boris Gelmont, Vera Gorfinkel, and
Serge Luryi, "Theory of the spectral lineshape and
gain in quantum wells with intersubband transitions", Appl.
Phys. Lett. 68, pp. 2171-2173 (1996).
138. M. Y. Frankel, G. L. Belenky, S.
Luryi, T. F. Carruthers, M. L. Dennis, A. Y. Cho, R. A. Hamm, and D. L.
Sivco, "Carrier dynamics and photodetection in charge
injection transistors", J. Appl. Phys. 79, pp.
3312-3317 (1996).
1995
137. Vera Gorfinkel, Boris Gelmont and
Serge Luryi, "Gain spectra and temperature
characteristics of quantum
cascade lasers", Proc. 1995 Int. Workshop on Physics and
Computer
Modeling of Devices based on Low-Dimensional Structures, ed. by V.
Ryzhii,
C. Hamaguchi, V. Mitin, and M. Ershov, IEEE Comp. Soc. Press, pp.
94-104.
136. E. L. Portnoi, V. B. Gorfinkel, E. A.
Avrutin, I. Thayne, D. A. Barrow, J. H. Marsh, and S. Luryi, "Optoelectronic Microwave-Range Frequency Mixing in
Semiconductor Lasers", IEEE J. Select. Top. Quant. Electron. ,
Vol. 1, pp. 451-460 (1995).
135. A. Frommer, S. Luryi, D. T. Nichols,
J. Lopata, and W. S. Hobson,
"Direct modulation and optical confinement factor
modulation of semiconductor lasers", Appl. Phys. Lett. 67
pp. 1645-1647 (1995); an expanded version in Fiber and Integrated
Optics15, pp. 81-88 (1996).
134. M. Mastrapasqua, G. Berthold, C.
Canali, S. Luryi, E. Zanoni, M. Manfredi, D. L. Sivco, and A. Y. Cho, "Hot electron luminescence in InGaAs transistor
channel", Appl. Phys. Lett. 66, pp. 1376-1378
(1995).
133. V. B. Gorfinkel and S. Luryi, "Fundamental limits for linearity of CATV lasers",
IEEE J. Lightwave Technol. 13, pp. 252-260 (1995); also
Proceedings of Int. Symp. Compound Semicond.
, Sun Diego, Sept 1994 (Inst. Phys. Conf. Ser. No 141:
Chap.
5, pp. 477-482, IOP Publishing, 1995).
132. G. L. Belenky, R. F. Kazarinov, J.
Lopata, S. Luryi, T. Tanbun-Ek, and P. A. Garbinski, "Direct
measurement of the carrier leakage out of the active region in
InGaAsP/InP laser heterostructures", IEEE Trans. Electron
Devices TED-42, pp. 215-218 (1995).
1994
131. S. Luryi, "How to
make an ideal HBT and sell it
too", IEEE Trans. Electron DevicesTED-41, pp.
2241-2247
(1994).
130. S. Luryi, "Active
packaging: a new fabrication principle for ultra-high performance
components and systems", Proc. International Symp. on Nanostructures:
Physics and Technology", Russian Acad. of Sci. (1994) pp. 1-6. Also
see AT&T Technical Memorandum 11158-931022-52
129. N. Lifshitz and S. Luryi, "Enhanced channel mobility in thin film transistors",
IEEE Electron Device Lett. EDL-15, pp. 274-276 (1994).
128. N. Lifshitz and S. Luryi, "Dependence of the off-state current in polycrystalline
silicon thin film on electric field in the channel", Appl.
Phys. Lett. 64, pp. 2114-2115 (1994).
127. B. Laikhtman and S. Luryi, "Landauer formula for transmission across an interface",
Phys. Rev. B 49, pp. 17,177-17,184 (1994).
126. V. B. Gorfinkel and S. Luryi, "Fast data coding
using modulation of interband optical properties by intersubband
absorption
in quantum wells", in Quantum Well Intersubband Transition
Physics
and Devices, ed. by H. C. Liu, B. F. Levine, and J. Y. Anderson
(Kluwer
Academic Publishers, 1994) pp. 533-545.
125. G. L. Belenky, A. Kastalsky, S. Luryi,
P. A. Garbinski, A. Y. Cho, and D. L. Sivco, "Measurement
of the effective temperature of majority carriers under injection of
hot minority carriers in heterostructures", Appl. Phys. Lett. 64,
pp. 2247-2249 (1994).
124. G. L. Belenky, P. A. Garbinski, P. R.
Smith, S. Luryi, A. Y. Cho,
R. A. Hamm, and D. L. Sivco, "Microwave performance
of
top-collector charge injection transistors on InP substrates", Semicond.
Sci.
Tech. 9, pp. 1215-1219 (1994).
123. C. Tedesco, M. Mastrapasqua, C.
Canali, S. Luryi, M. Manfredi, E.
Zanoni, D. L. Sivco, and A. Y. Cho, "Impact
ionization
and real-space transfer of minority carriers in charge injection
transistors",
IEEE Electron Device Lett. 15, pp. 377-379 (1994).
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