Lect 10
Lecture notes available
EE Grad Student Mailroom
Rm 263 Light Eng Bldg
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Chapter 4: Field effect
transistors
two-dimensional channel; resistance "per square"
conductance g and transconductance gm
; figure of merit gm/C
Transistor characteristics
FET channel versus a thin film diode
Pinch-off; gradual channel approxiamtion
short shannel effects
JFET and MESFET
Channel mobility and velocity saturation
IGFET (Insulated gate FET)
MOS structure
Flatbands
Band bending
Threshold evaluation
Gradual channel approximation and pinch-off in
MOSFET
Other IGFETs (non-MOS): heterostructure FETs
Book: Chapter 4 |
