a_756706
Direct
measurements of heterobarrier leakage current and modal gain in 2.3
/spl mu/m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers
- Donetsky, D.V.; Belenky, G.L.; Garbuzov, D.Z.; Lee, H.;
Martinelli, R.U.; Taylor, G.; Luryi, S.; Connolly, J.C.
State Univ. of New York, Stony Brook, NY, USA
This paper appears in: Electronics Letters
On page(s): 298 - 299
18 Feb. 1999
Volume: 35 Issue: 4
ISSN: 0013-5194
References Cited: 5
CODEN: ELLEAK
INSPEC Accession Number: 6204691
Abstract:
The heterobarrier hole leakage current and modal gain for
GaSb-based lasers have been measured for the first time. It is shown
that this leakage current is not a factor limiting high temperature
operation of the device. Significant broadening of the optical gain
with increasing temperature is demonstrated.
Index Terms:
indium compounds; direct measurements; heterobarrier leakage
current; modal gain; double QW structure; p-substrate; broad area
lasers; hole leakage current; GaSb-based lasers; high temperature
operation; optical gain broadening; semiconductor lasers; 2.3 micron; InGaAsSb-AlGaAsSb
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