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United States Patent | 5,461,245 |
Gribnikov ,   et al. | October 24, 1995 |
The novel bipolar transistor has at least two separated emitter contacts and no base contact, and the emitter/base p-n junction has backward diode characteristics. The transistor can function as a logic device, but can also function as an amplifying device in digital or analog circuits.
Inventors: | Gribnikov; Zinovy S. (Kiev, UA); Luryi; Serge (Bridgewater, NJ) |
Assignee: | AT&T Corp. (Murray Hill, NJ) |
Appl. No.: | 295303 |
Filed: | August 24, 1994 |
Current U.S. Class: | 257/197; 257/566; 257/586 |
Intern'l Class: | H01L 029/24; H01L 029/161 |
Field of Search: | 257/574,197,198,183,580,579,586,575,83,187,462,566 |
4999687 | Mar., 1991 | Luryi et al. | 357/16. |
5006912 | Apr., 1991 | Smith et al. | 257/197. |
5315135 | May., 1994 | Ueda | 257/198. |
Foreign Patent Documents | |||
61-222166 | Oct., 1986 | JP | 257/197. |
1-297860 | Nov., 1989 | JP | 257/197. |
4-96274 | Mar., 1992 | JP | 257/197. |
"Charge Injection Logic", by S. Luryi, Applied Physics Letters, 57 (17), 22 Oct. 1990, pp. 1787-1789. |