A transistor device using an interdigitated gate and electrode surface
structure to control thermionic emission over a potential barrier is
described. Complementary logic structures comprising such transistors are
discussed.
Other References
C. O. Bozler et al., "Fabrication and Numerical Simulation of the Permeable
Base Transistor," IEEE Transactions on Electron Devices, vol. ED-27, No.
6, Jun., 1980, pp. 1128-1141.
J. Nishizawa et al., "Field-Effect Transistor Versus Analog Transistor
(Static Induction Transistor)," IEEE Transactions on Electron Devices,
vol. ED-22, No. 4, Apr., 1975, pp. 185-197.
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